Objective of this experiment:
1. 1. To demonstrate the operation of a field effect Transistor (FET) characteristic and testing methods.
2. To examine the relationship between the gate-to-source voltage (VGS), and drain current (ID) and the drain-to-source voltage (VDS) in an N-channel junction FET.
3. To measure and record the corresponding VGS, ID and VDS values and then plot these values to form a set of drain characteristic curves.
4. To complete the experiment by using these curves to determine the trans-conductance of the FET. Built in regulated power supply: + 15V/300mA, -15 V/300mA
Input Supply: 230 VAC/50Hz mains operated.
Dimension: 27cms x 17cms x 10cms.
Weight: 500gms |
