Logo
Educational tender items for schools in Malaysia
"AVAILABLE ISI STUDENT MICROSCOPE FOR NCERT KITS (UPSKL, SSK, SSLK BIOLOGY)"
 
Product Range
 
News Letter
All Fields are mandatory.
Your Name :
Country :
Your Email ID:
Security Code
 
   
 

IGBT TRAINER. MODEL IBL-PE-18

Insulated Gate Bipolar Transistor (IGBT) is a switching transistor that is controlled by voltage applied to the gate terminal. Device operation and structure or similar to those of an insulated gate field effect transistor (IGFET) more commonly known as MOSFET. The principle difference between the two device types is that the IGBT uses conductivity modulation to reduce the ON state conduction losses.

The IGBT consists of IGBT power setup along with hybrid driver circuit having isolation between input and output with built-in Opto-coupler. A built-in de-saturation detector provides necessary short circuit protection. An LED will indicate the short circuit activation signal.

Using this trainer it is possible to study V-I characteristics of (a) VCE test, (b) Resistive load switching test, and (c) Half bridge switching test circuit. This unit has necessary gate drive circuits.

This requires external instruments as support equipment.
1. High voltage, high current DC source Model PES-1
2. 10 A DC current meter
3. Variable Resistive Load
4. Variable inductive Load

Specifications:
IGBT :

  • Collector Emitter voltage :VCES = 600V
  • DC Collector current : IC.nom = 50A
  • Repetitive peak Collector current : ICRMvvvv = 100A
  • Total power dissipation : PTOT = 280Watts
  • Gate emitter peak voltage : VGES = 20V
  • DC forward current : IF = 50A
  • Collector Emitter saturation voltage : VCesat = 2.2V
  • Gate threshold voltage : VGEth = 5.5 V
  • Collector cutoff current : ICES = 1mA

This trainer must highlight the following features of an IGBT.

  • measurement of switching losses (IGBT and diode)
  • measurement of on-state losses(IGBT and diode)
  • overall loss evaluation
  • short circuit test
  • evaluation of the driver circuit under different boundary conditions
  • comparison of the IGBT behavior under different conditions (voltage, driving, temperature, freewheeling diode)

NOTE: it is important to note that, dangerous voltage will exist when IGBTs are connected to this circuit. So all the precautions must be taken to avoid any fatalities while conducting the experiment.

Qty :

 
 
 
Home|About Us|Products|Certificates|Enquiry|Feedback|FAQ's|Contact Us
Copyright © 2010 - International Biological Laboratories. All rights reserved.
Our Associated Websites
www.interlabs-India.com | www.interlabs.in | www.interlabs.co.in | www.ambalalab.com | www.interlabs.info | www.interlabs-has.com | www.best-visibility.com | www.vidyatechnoart.com | www.labs-glassware.com | www.v-pyrex.com | www.ncert-kits.com | www.shoppingbags.com | www.pharmaceuticalgiftsanatomicalmodels.com
 
myspace profile views counter