Objective of this experiment:
To demonstrate the operation of a typical insulated gate FET. You will examine the relationship between the gate-to source voltage(VGS)the gate drain current (ID) and the drain-to-source voltage (VDS)in a N-channel, depletion mode IGFET. You will measure the corresponding VGS, ID and VDS values and graphically plot them to form a set of drain characteristic values. Built in regulated power supply: +15V/300mA, -1 5V/300mA.
Input Supply: 230 VAC/50Hz mains operated.
Dimension: 27cms x 17cms x 10cms.
Weight: 500gms |
