Objective of this experiment:
1. To investigate the characteristics of typical germanium and silicon semiconductor diodes, plotting voltage - current curves and find out the knee of the curve in each case.
2. To find that there is no linearity below the knee and there is linearity above the knee.
3. To find that the forward bias voltage across the germanium diode is around 0.3 V and that of the silicon diode is about 0.6 V to 0.7 Volts.
4. To observe that the forward voltage varies in proportion to the forward current, although not very significant.
5. To measure the leakage currents in these diodes by reverse biasing, although they are not very significant.
6. To test diodes with an ohmmeter. NO POWER SUPPLY IS REQUIRED, since it is constructed out of passive components.
Dimension: 27cms x 17cms x 10cms.
Weight: 500gms |
